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Production of Iridium Metal Thin Films for Application as Electrodes in DRAMs and FRAMs

Received: 5 December 2014     Accepted: 9 December 2014     Published: 27 December 2014
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Abstract

Thin films of Noble metals such as Iridium have several potential applications in ICs. Electronic devices are fabricated on the integrated circuits that include transistor, capacitor and resistance. They can be used as electrodes in DRAMs and FRAMs, and as gate electrodes in MOSFETs. Noble metals are excellent metals for electrode fabrication because chemical stability, highly electrical resistance, highly work function and many of them can withstand highly oxidizing conditions. In this paper, emphasis is on reaction mechanisms and limits, leakage currents, electrodes and electrode interfaces and deposition techniques.

Published in Journal of Electrical and Electronic Engineering (Volume 3, Issue 2-1)

This article belongs to the Special Issue Research and Practices in Electrical and Electronic Engineering in Developing Countries

DOI 10.11648/j.jeee.s.2015030201.18
Page(s) 35-38
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2014. Published by Science Publishing Group

Keywords

Atomic Layer Deposition, Precursor, Gate Electrode, Dynamic and Ferroelectric Memories, Capacitors

References
[1] Ritala, M. and Leskelä, M., Atomic layer deposition of thin films for microelectronics, Electrochem.Soc. Proc., 2003-08 (2003) 479–490.
[2] Aaltonen, T., Ritala, M., and Leskelä, M., Atomic layer deposition of noble metals, in Advanced Metallization Conference 2004 (AMC 2004), (Eds: D. Erb, P. Ramm, K. Masu, and A. Osaki), Materials Research Society (2005) 663–667.
[3] Jylhä, O., Saarinen, R., Lindblad, M., and Krause, O., Iridium on porous supports prepared by ALD for heterogeneous catalysis applications, ALD 2004, Helsinki, August 16-18 (2004).
[4] Aaltonen, T., Ritala, M., Sammelselg, V., and Leskelä, M., Atomic layer deposition of ridium thin films, J. Electrochem. Soc., 151 (2004) G489–G492.
[5] Aaltonen, T., Ritala, M., and Leskelä, M., Atomic layer deposition of noble metals, in Advanced Metallization Conference 2004 (AMC 2004), (Eds: D. Erb, P. Ramm, K. Masu, and A. Osaki), Materials Research Society (2005) 663–667.
[6] Mandelman, J. A., Dennard, R. H., Bronner, G. B., DeBrosse, J. K., Divakaruni, R., Li, Y., and Radens, C. J., Challenges and future directions for the scaling of dynamic random-access memory (DRAM), IBM. J. Res. Develop., 46 (2002) 187–212.
[7] Iwai, H. and Ohmi, S., Silicon integrated circuit technology from past to future, Micro electron. Reliab. 42 (2002) 465–491.
[8] Ishiwara, H., Recent progress of ferroelectric memories, Int. J. High Speed Electron. Syst., 12 (2002) 315–323.
[9] Yoon, D.-S., Roh, J. S., Baik, H. K., and Lee, S.-M., Future direction for a diffusion barrier in future high-density volatile and nonvolatile memory devices, Crit. Rev. Solid State Mater. Sci., 27 (2002)143–226.
Cite This Article
  • APA Style

    Sakine Shirvaliloo, Hale Kangarloo. (2014). Production of Iridium Metal Thin Films for Application as Electrodes in DRAMs and FRAMs. Journal of Electrical and Electronic Engineering, 3(2-1), 35-38. https://doi.org/10.11648/j.jeee.s.2015030201.18

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    ACS Style

    Sakine Shirvaliloo; Hale Kangarloo. Production of Iridium Metal Thin Films for Application as Electrodes in DRAMs and FRAMs. J. Electr. Electron. Eng. 2014, 3(2-1), 35-38. doi: 10.11648/j.jeee.s.2015030201.18

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    AMA Style

    Sakine Shirvaliloo, Hale Kangarloo. Production of Iridium Metal Thin Films for Application as Electrodes in DRAMs and FRAMs. J Electr Electron Eng. 2014;3(2-1):35-38. doi: 10.11648/j.jeee.s.2015030201.18

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  • @article{10.11648/j.jeee.s.2015030201.18,
      author = {Sakine Shirvaliloo and Hale Kangarloo},
      title = {Production of Iridium Metal Thin Films for Application as Electrodes in DRAMs and FRAMs},
      journal = {Journal of Electrical and Electronic Engineering},
      volume = {3},
      number = {2-1},
      pages = {35-38},
      doi = {10.11648/j.jeee.s.2015030201.18},
      url = {https://doi.org/10.11648/j.jeee.s.2015030201.18},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.jeee.s.2015030201.18},
      abstract = {Thin films of Noble metals such as Iridium have several potential applications in ICs. Electronic devices are fabricated on the integrated circuits that include transistor, capacitor and resistance. They can be used as electrodes in DRAMs and FRAMs, and as gate electrodes in MOSFETs. Noble metals are excellent metals for electrode fabrication because chemical stability, highly electrical resistance, highly work function and many of them can withstand highly oxidizing conditions. In this paper, emphasis is on reaction mechanisms and limits, leakage currents, electrodes and electrode interfaces and deposition techniques.},
     year = {2014}
    }
    

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  • TY  - JOUR
    T1  - Production of Iridium Metal Thin Films for Application as Electrodes in DRAMs and FRAMs
    AU  - Sakine Shirvaliloo
    AU  - Hale Kangarloo
    Y1  - 2014/12/27
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    N1  - https://doi.org/10.11648/j.jeee.s.2015030201.18
    DO  - 10.11648/j.jeee.s.2015030201.18
    T2  - Journal of Electrical and Electronic Engineering
    JF  - Journal of Electrical and Electronic Engineering
    JO  - Journal of Electrical and Electronic Engineering
    SP  - 35
    EP  - 38
    PB  - Science Publishing Group
    SN  - 2329-1605
    UR  - https://doi.org/10.11648/j.jeee.s.2015030201.18
    AB  - Thin films of Noble metals such as Iridium have several potential applications in ICs. Electronic devices are fabricated on the integrated circuits that include transistor, capacitor and resistance. They can be used as electrodes in DRAMs and FRAMs, and as gate electrodes in MOSFETs. Noble metals are excellent metals for electrode fabrication because chemical stability, highly electrical resistance, highly work function and many of them can withstand highly oxidizing conditions. In this paper, emphasis is on reaction mechanisms and limits, leakage currents, electrodes and electrode interfaces and deposition techniques.
    VL  - 3
    IS  - 2-1
    ER  - 

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Author Information
  • Department of Medical Physics, Iran University of Medical Sciences, Tehran, Iran

  • Faculty of Science, IAV, Branch Urmia, Urmia, Iran

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