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Nanosize Clusters in InAs and InP Compounds and Their Solid Solutions InPxAs1–x

Received: 3 February 2017     Accepted: 4 February 2017     Published: 28 February 2017
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Abstract

The compounds of indium arsenide, indium phosphide and their solid solutions are important materials for optoelectronics, microelectronics and nanotechnology. The stabilization of nanoparticles is a major problem in modern nanotechnology. The presented work can provide valuable information in the indicated direction. It has been shown that, it is possible to create nanoscale clusters and stable point type defects in crystals with the help of hard radiation. Investigations of very slow diffusion processes in irradiated crystals allow to reveal “abnormal” behavior of nanoscale clusters. It has been shown that in certain materials, the curves of the frequency dependence of the optical absorption coefficient near the fundamental edge at 300 K for a long time (about two years) do not shift to the “restoration”, but move to the opposite direction. We studied the electrical and optical properties and the heat treatment processes of crystals irradiated with fast neutron fluence (2 · 1018 n / cm2) and high-energy (50 MeV) electrons (6.0 • 1017 e / cm2). As a result, the mechanism of revealed “anomalous” phenomena has been established. We found that nanosize clusters contribute to a significant increase in the basic parameter of the thermoelectric material’s thermoelectric efficiency. Scattering mechanism s of electrons on nanosize clusters has been also established. In addition the possible influence of nanoscale clusters as well as small point type defects on important parameters of the materials, in particular, the charge carriers concentration and mobility, electrons effectivemass, dispersion of the conduction band, and crystal lattice vibrations have been analyzed. Using the properties of small defects, radiation-resistant materials were created, with standing very high dose of hard radiation.

Published in American Journal of Nano Research and Applications (Volume 5, Issue 3-1)

This article belongs to the Special Issue Nanotechnologies

DOI 10.11648/j.nano.s.2017050301.21
Page(s) 48-55
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2017. Published by Science Publishing Group

Keywords

Nanosize Clusters, Radiation, Semiconductors

References
[1] X. Jiang, Q. Xiong, S. Nam, F. Qian, Y. Li, and Ch. M. Lieber, “InAs/InP radial nanowire heterostructures as high electron mobility devices,” Nano Lett., vol. 7, p. 3214, 2007.
[2] L. Romeo, S. Roddaro, A. Pitani, D. Ercolani, L. Sorba, and F. Beltran, “Electrostatic spin control in InAs/InP nanowire quantum dots,” Nano Lett., vol. 12, p. 4490, 2012.
[3] D. W. Stokes, J. H. Li, R. L. Forrest, S. L. Ammu, J. C. Lenzi, S. C. Moss, B. Z. Nosho, E. H. Aifer, B. R. Bennett, and L. J. Whitman, “Optical and structural properties of InAs/GaSb nanostructures,” Mater. Res. Soc. Symp. Proc., vol. 794, no. T9.9, 2004.
[4] T. C. Newell, D. J. Bossert, A. Stintz, B. Fuch, K. J. Malloy, and L. F. Lester, “Gain and line width enhancement factor in InAs quantum-dot laser diodes,” IEEE J. Phot. Technol. Lett., vol. 11, p. 1527, 1999.
[5] Y. Kuwahara, H. Oyanagi, Y. Takeda, H. Yamaguchi, and M. Aono, “Bond length relaxation in ultrathin GaxIn1–xP and InPxAs1–x layers on InP(100),” Appl. Sur. Sci., vol. 60/61, p. 529, 1992.
[6] K. Zdansky, L. Pekarek, and P. Kacerovsky, “Evaluation of semi-insulating Ti-doped and Mn-doped InP for radiation detection”, Semicond. Sci. Technol., vol. 16, p. 1002, 2001.
[7] A. Andrievcky, “The thermal stability of nanomaterials,” Uspekhi – Chem., vol. 71, р. 968, 2002.
[8] V. I. Roldugin, “Self-organization of nanoparticles at interphase surfaces,” Uspekhi – Chem., vol. 73, р. 123, 2004.
[9] U. D. Tretjakov, “Self-organization processes in chemistry of materials,” Uspekhi – Chem., vol. 72, р. 731, 2003.
[10] L. W. Aukerman, “Electron irradiation of indium arsenide,” Phys. Rev., vol. 115, p. 1133, 1959.
[11] W. Walukievicz, “Mechanism of Schottky barrier formation: The role of amphoteric native defects,” J. Vac. Sci. Technol., vol. 5, p. 1062, 1987.
[12] H. Gerstenberg, “Transport properties of degenerate InS band InAs after fast neutron irradiation at low temperature,” Phys. Stat. Sol. A, vol. 128, p. 483, 1991.
[13] E. Burstein, “Anomalous optical absorption limit in InSb,” Phys. Rev., vol. 93, p. 632, 1954.
[14] B. I. Shklovskii and A. L. Efros, “Electronic properties of doped semiconductors,” JETP, vol. 59, p. 1343, 1970.
[15] N. P. Kekelidze and G. P. Kekelidze, “Optical absorption near the threshold in n-type crystals InP, InAs and solid solutions InPxAs1–x,” Phys. Lett. A, vol. 42, p. 129, 1972.
[16] G. D. Watkins, J. W. Corbett, and R. M. Walker, “Spin resonance in electron irradiated silicon,” J. Appl. Phys., vol. 30, p. 1198, 1959.
[17] J. W. Corbett and J. C. Bourgoin, “Point Defects in Solids, vol. 2,” Ed. J. H. Crawford, New York, Plenum Press, 1975.
[18] N. P. Kekelidze, G. P. Kekelidze, and Z. D. Makharadze, “Lattice vibration of AsxP1–xIn solid solutions,” J. Phys. Chem. Solids, vol. 34, p. 2117, 1973.
[19] R. J. Nicholas, R. A. Stradling, J. C. Portal, and S. Askenazy, “The magnetophonon effect in InAs1–xPx,” J. Phys. C, vol. 12, p. 1653, 1979.
[20] D. N. Talvar, M. Mandevyver and M.Zigone, “Impurity induced Raman scattering spectra in zincblende-type crystals: Application to mixed indium pnictides,” J. Phys C, vol. 13, p. 3775, 1980.
[21] D. J. Lockwood, N. L. Rowell, and G. Yu, “Optical phonons in InP1–xAsx revisited,” J. Appl. Phys., vol. 102, no. 033512, 2007.
[22] A. Y. Shik, “Electronic properties of inhomogeneous semiconductors,” Electron Component Science Monographs, London, Gordon & Breach Publ., 1995.
[23] R. Mansfield, “Impurity scattering in semiconductors,” Proc. Phys. Soc. B, vol. 69, p. 76, 1956.
[24] F. J. Blatt, “Theory of Mobility of Electrons in Solids,” New York, Academic Press Inc., 1957.
[25] H. Ehrenreich, “Electron mobility of indium arsenide phosphide (InAsyP1−y),” J. Phys. Chem. Solids, vol. 12, p. 97, 1959.
[26] A. I. Anselm, “Introduction to the Theory of Semiconductors,” Moscow, Nauka, 1978.
[27] L. Makowski and M. Glicksman, “Disorder scattering in solid solutions of III–V semiconducting compounds,” J. Phys. Chem. Solids, vol. 34, p. 487, 1973.
[28] J. L. McNichols and N. Berg, “Neutron-induced metallic spike zones in GaAs,” IEEE Trans. Nucl. Sci., vol. 18, p. 21, 1971.
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    Nodar Kekelidze, Elza Khutsishvili, Zaur Kvinikadze, Zinaida Davitaja, David Kekelidze, et al. (2017). Nanosize Clusters in InAs and InP Compounds and Their Solid Solutions InPxAs1–x. American Journal of Nano Research and Applications, 5(3-1), 48-55. https://doi.org/10.11648/j.nano.s.2017050301.21

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    ACS Style

    Nodar Kekelidze; Elza Khutsishvili; Zaur Kvinikadze; Zinaida Davitaja; David Kekelidze, et al. Nanosize Clusters in InAs and InP Compounds and Their Solid Solutions InPxAs1–x. Am. J. Nano Res. Appl. 2017, 5(3-1), 48-55. doi: 10.11648/j.nano.s.2017050301.21

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    AMA Style

    Nodar Kekelidze, Elza Khutsishvili, Zaur Kvinikadze, Zinaida Davitaja, David Kekelidze, et al. Nanosize Clusters in InAs and InP Compounds and Their Solid Solutions InPxAs1–x. Am J Nano Res Appl. 2017;5(3-1):48-55. doi: 10.11648/j.nano.s.2017050301.21

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  • @article{10.11648/j.nano.s.2017050301.21,
      author = {Nodar Kekelidze and Elza Khutsishvili and Zaur Kvinikadze and Zinaida Davitaja and David Kekelidze and Bela Kvirkvelia and Ketevan Sadradze and Lali Nadiradze and George Kekelidze},
      title = {Nanosize Clusters in InAs and InP Compounds and Their Solid Solutions InPxAs1–x},
      journal = {American Journal of Nano Research and Applications},
      volume = {5},
      number = {3-1},
      pages = {48-55},
      doi = {10.11648/j.nano.s.2017050301.21},
      url = {https://doi.org/10.11648/j.nano.s.2017050301.21},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.nano.s.2017050301.21},
      abstract = {The compounds of indium arsenide, indium phosphide and their solid solutions are important materials for optoelectronics, microelectronics and nanotechnology. The stabilization of nanoparticles is a major problem in modern nanotechnology. The presented work can provide valuable information in the indicated direction. It has been shown that, it is possible to create nanoscale clusters and stable point type defects in crystals with the help of hard radiation. Investigations of very slow diffusion processes in irradiated crystals allow to reveal “abnormal” behavior of nanoscale clusters. It has been shown that in certain materials, the curves of the frequency dependence of the optical absorption coefficient near the fundamental edge at 300 K for a long time (about two years) do not shift to the “restoration”, but move to the opposite direction. We studied the electrical and optical properties and the heat treatment processes of crystals irradiated with fast neutron fluence (2 · 1018 n / cm2) and high-energy (50 MeV) electrons (6.0 • 1017 e / cm2). As a result, the mechanism of revealed “anomalous” phenomena has been established. We found that nanosize clusters contribute to a significant increase in the basic parameter of the thermoelectric material’s thermoelectric efficiency. Scattering mechanism s of electrons on nanosize clusters has been also established. In addition the possible influence of nanoscale clusters as well as small point type defects on important parameters of the materials, in particular, the charge carriers concentration and mobility, electrons effectivemass, dispersion of the conduction band, and crystal lattice vibrations have been analyzed. Using the properties of small defects, radiation-resistant materials were created, with standing very high dose of hard radiation.},
     year = {2017}
    }
    

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  • TY  - JOUR
    T1  - Nanosize Clusters in InAs and InP Compounds and Their Solid Solutions InPxAs1–x
    AU  - Nodar Kekelidze
    AU  - Elza Khutsishvili
    AU  - Zaur Kvinikadze
    AU  - Zinaida Davitaja
    AU  - David Kekelidze
    AU  - Bela Kvirkvelia
    AU  - Ketevan Sadradze
    AU  - Lali Nadiradze
    AU  - George Kekelidze
    Y1  - 2017/02/28
    PY  - 2017
    N1  - https://doi.org/10.11648/j.nano.s.2017050301.21
    DO  - 10.11648/j.nano.s.2017050301.21
    T2  - American Journal of Nano Research and Applications
    JF  - American Journal of Nano Research and Applications
    JO  - American Journal of Nano Research and Applications
    SP  - 48
    EP  - 55
    PB  - Science Publishing Group
    SN  - 2575-3738
    UR  - https://doi.org/10.11648/j.nano.s.2017050301.21
    AB  - The compounds of indium arsenide, indium phosphide and their solid solutions are important materials for optoelectronics, microelectronics and nanotechnology. The stabilization of nanoparticles is a major problem in modern nanotechnology. The presented work can provide valuable information in the indicated direction. It has been shown that, it is possible to create nanoscale clusters and stable point type defects in crystals with the help of hard radiation. Investigations of very slow diffusion processes in irradiated crystals allow to reveal “abnormal” behavior of nanoscale clusters. It has been shown that in certain materials, the curves of the frequency dependence of the optical absorption coefficient near the fundamental edge at 300 K for a long time (about two years) do not shift to the “restoration”, but move to the opposite direction. We studied the electrical and optical properties and the heat treatment processes of crystals irradiated with fast neutron fluence (2 · 1018 n / cm2) and high-energy (50 MeV) electrons (6.0 • 1017 e / cm2). As a result, the mechanism of revealed “anomalous” phenomena has been established. We found that nanosize clusters contribute to a significant increase in the basic parameter of the thermoelectric material’s thermoelectric efficiency. Scattering mechanism s of electrons on nanosize clusters has been also established. In addition the possible influence of nanoscale clusters as well as small point type defects on important parameters of the materials, in particular, the charge carriers concentration and mobility, electrons effectivemass, dispersion of the conduction band, and crystal lattice vibrations have been analyzed. Using the properties of small defects, radiation-resistant materials were created, with standing very high dose of hard radiation.
    VL  - 5
    IS  - 3-1
    ER  - 

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Author Information
  • Semiconductor Materials Science Laboratory, F. Tavadze Institute of Metallurgy & Materials Science, Tbilisi, Georgia

  • Semiconductor Materials Science Laboratory, F. Tavadze Institute of Metallurgy & Materials Science, Tbilisi, Georgia

  • Substance Research Institute, I. Javakhishvili Tbilisi State University, Tbilisi, Georgia

  • Substance Research Institute, I. Javakhishvili Tbilisi State University, Tbilisi, Georgia

  • Semiconductor Materials Science Laboratory, F. Tavadze Institute of Metallurgy & Materials Science, Tbilisi, Georgia

  • Semiconductor Materials Science Laboratory, F. Tavadze Institute of Metallurgy & Materials Science, Tbilisi, Georgia

  • Faculty of Informatics & Control Systems, Georgian Technical University, Tbilisi, Georgia

  • Faculty of Informatics & Control Systems, Georgian Technical University, Tbilisi, Georgia

  • BoT, Eurosolar, Bonn, Germany

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